Coverart for item
The Resource Nanoscale semiconductor memories : technology and applications, edited by Santosh K. Kurinec, Krzysztof Iniewski

Nanoscale semiconductor memories : technology and applications, edited by Santosh K. Kurinec, Krzysztof Iniewski

Label
Nanoscale semiconductor memories : technology and applications
Title
Nanoscale semiconductor memories
Title remainder
technology and applications
Statement of responsibility
edited by Santosh K. Kurinec, Krzysztof Iniewski
Contributor
Editor
Subject
Language
eng
Summary
"Preface At no time in the history of the semiconductor industry has memory technology assumed such a pivotal position. The last decade has seen a remarkable shift in usage and value of semiconductor memory technologies. These changes have been driven by the elevation of three particular target applications for the development of memory technology performance attributes. The first and most obvious shift is that mobile multimedia applications such as tablets and advanced cell phones have now replaced desktop data processing as the primary target for many new semiconductor technologies. The significance of this shift is that the smaller form factor and smaller semiconductor content automatically increases the percentage of value contributed by the analog wireless and the memory components. The second trend is driven by the explosive growth in the sheer volume of data that is being created and stored. The continuing growth in digital information is heavily driven by mobile multimedia access to cloud storage on the Internet as well as the astounding increase in image data storage and manipulation. The third trend is the shift of emphasis from the individual components to the ability to configure some highvolume elements in subsystems and multidie packages rather than as discrete components on a motherboard. Over the past three decades, numerous memory technologies have been brought to market with varying degrees of commercial success, such as static randomaccess memory (SRAM), pseudostatic RAM, NOR flash, erasable programmable readonly memory (EPROM), electrically erasable programmable readonly memory (EEPROM), dynamic RAM (DRAM), and NAND flash. Generally speaking, these "memory" technologies can be split into two categories: volatile and nonvolatile"--
Member of
Assigning source
Provided by publisher
Cataloging source
CUS
Dewey number
621.39/732
Illustrations
illustrations
Index
index present
LC call number
TK7895.M4
LC item number
N36 2013
Literary form
non fiction
Nature of contents
  • dictionaries
  • bibliography
http://library.link/vocab/relatedWorkOrContributorDate
1960-
http://library.link/vocab/relatedWorkOrContributorName
  • Kurinec, Santosh K.
  • Iniewski, Krzysztof
Series statement
Devices, circuits, and systems
http://library.link/vocab/subjectName
  • Semiconductor storage devices
  • Nanoelectronics
  • TECHNOLOGY & ENGINEERING
  • TECHNOLOGY & ENGINEERING
  • TECHNOLOGY & ENGINEERING
  • TECHNOLOGY & ENGINEERING
  • Nanoelectronics
  • Semiconductor storage devices
Label
Nanoscale semiconductor memories : technology and applications, edited by Santosh K. Kurinec, Krzysztof Iniewski
Instantiates
Publication
Copyright
Bibliography note
Includes bibliographical references and index
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
  • Concepts of capacitorless IT-DRAM and unified memory on SOI
  • Sorin Cristoloveanu and Maryline Bawedin
  • A-RAM family: novel capacitorless IT-DRAM cells for 22 nm nodes and beyond
  • Francisco Gamiz, Noel Rodriguez, and Sorin Cristoloveanu -- Quantum dot-based flash memories
  • Tobias Nowozin, Andreas Marent, Martin Geller, and Dieter Bimberg
  • Spin-transfer-torque MRAM
  • Kangho Lee
  • Magnetic domain wall "Racetrack" memory
  • Michael C. Gaidis and Luc Thomas
  • Phase-change memory cell model and simulation
  • SRAM: the benchmark of VLSI technology
  • Jin He, Yujun Wei, and Mansun Chan
  • Phase-change memory devices and electrothermal modeling
  • Helena Silva, Azer Faraclas, and Ali Gokirmak
  • Nonvolatile memory device: resistive random access memory
  • Peng Zhou, Lin Chen, Hangbing Lv, Haijun Wan, and Qingqing Sun
  • Nanoscale resistive random access memory: materials, devices, and circuits
  • Hong Yu Yu
  • Qingqing Liang
  • Complete guide to multiple upsets in SRAMs processed in decananometric CMOS technologies
  • Gilles Gasiot and Philippe Roche
  • Radiation hardened by design SRAM strategies for TID and SEE mitigation
  • Lawrence T. Clark
  • DRAM technology
  • Myoung Jin Lee
Control code
865582462
Extent
1 online resource.
Form of item
online
Isbn
9781466560611
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
http://library.link/vocab/ext/overdrive/overdriveId
549272
Specific material designation
remote
System control number
(OCoLC)865582462
Label
Nanoscale semiconductor memories : technology and applications, edited by Santosh K. Kurinec, Krzysztof Iniewski
Publication
Copyright
Bibliography note
Includes bibliographical references and index
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
  • Concepts of capacitorless IT-DRAM and unified memory on SOI
  • Sorin Cristoloveanu and Maryline Bawedin
  • A-RAM family: novel capacitorless IT-DRAM cells for 22 nm nodes and beyond
  • Francisco Gamiz, Noel Rodriguez, and Sorin Cristoloveanu -- Quantum dot-based flash memories
  • Tobias Nowozin, Andreas Marent, Martin Geller, and Dieter Bimberg
  • Spin-transfer-torque MRAM
  • Kangho Lee
  • Magnetic domain wall "Racetrack" memory
  • Michael C. Gaidis and Luc Thomas
  • Phase-change memory cell model and simulation
  • SRAM: the benchmark of VLSI technology
  • Jin He, Yujun Wei, and Mansun Chan
  • Phase-change memory devices and electrothermal modeling
  • Helena Silva, Azer Faraclas, and Ali Gokirmak
  • Nonvolatile memory device: resistive random access memory
  • Peng Zhou, Lin Chen, Hangbing Lv, Haijun Wan, and Qingqing Sun
  • Nanoscale resistive random access memory: materials, devices, and circuits
  • Hong Yu Yu
  • Qingqing Liang
  • Complete guide to multiple upsets in SRAMs processed in decananometric CMOS technologies
  • Gilles Gasiot and Philippe Roche
  • Radiation hardened by design SRAM strategies for TID and SEE mitigation
  • Lawrence T. Clark
  • DRAM technology
  • Myoung Jin Lee
Control code
865582462
Extent
1 online resource.
Form of item
online
Isbn
9781466560611
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
http://library.link/vocab/ext/overdrive/overdriveId
549272
Specific material designation
remote
System control number
(OCoLC)865582462

Library Locations

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      38.946102 -92.330125
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