The Resource Nanoscale semiconductor memories : technology and applications, edited by Santosh K. Kurinec, Krzysztof Iniewski
Nanoscale semiconductor memories : technology and applications, edited by Santosh K. Kurinec, Krzysztof Iniewski
Resource Information
The item Nanoscale semiconductor memories : technology and applications, edited by Santosh K. Kurinec, Krzysztof Iniewski represents a specific, individual, material embodiment of a distinct intellectual or artistic creation found in University of Missouri Libraries.This item is available to borrow from 2 library branches.
Resource Information
The item Nanoscale semiconductor memories : technology and applications, edited by Santosh K. Kurinec, Krzysztof Iniewski represents a specific, individual, material embodiment of a distinct intellectual or artistic creation found in University of Missouri Libraries.
This item is available to borrow from 2 library branches.
- Summary
- "Preface At no time in the history of the semiconductor industry has memory technology assumed such a pivotal position. The last decade has seen a remarkable shift in usage and value of semiconductor memory technologies. These changes have been driven by the elevation of three particular target applications for the development of memory technology performance attributes. The first and most obvious shift is that mobile multimedia applications such as tablets and advanced cell phones have now replaced desktop data processing as the primary target for many new semiconductor technologies. The significance of this shift is that the smaller form factor and smaller semiconductor content automatically increases the percentage of value contributed by the analog wireless and the memory components. The second trend is driven by the explosive growth in the sheer volume of data that is being created and stored. The continuing growth in digital information is heavily driven by mobile multimedia access to cloud storage on the Internet as well as the astounding increase in image data storage and manipulation. The third trend is the shift of emphasis from the individual components to the ability to configure some highvolume elements in subsystems and multidie packages rather than as discrete components on a motherboard. Over the past three decades, numerous memory technologies have been brought to market with varying degrees of commercial success, such as static randomaccess memory (SRAM), pseudostatic RAM, NOR flash, erasable programmable readonly memory (EPROM), electrically erasable programmable readonly memory (EEPROM), dynamic RAM (DRAM), and NAND flash. Generally speaking, these "memory" technologies can be split into two categories: volatile and nonvolatile"--
- Language
- eng
- Extent
- 1 online resource.
- Contents
-
- Concepts of capacitorless IT-DRAM and unified memory on SOI
- Sorin Cristoloveanu and Maryline Bawedin
- A-RAM family: novel capacitorless IT-DRAM cells for 22 nm nodes and beyond
- Francisco Gamiz, Noel Rodriguez, and Sorin Cristoloveanu -- Quantum dot-based flash memories
- Tobias Nowozin, Andreas Marent, Martin Geller, and Dieter Bimberg
- Spin-transfer-torque MRAM
- Kangho Lee
- Magnetic domain wall "Racetrack" memory
- Michael C. Gaidis and Luc Thomas
- Phase-change memory cell model and simulation
- SRAM: the benchmark of VLSI technology
- Jin He, Yujun Wei, and Mansun Chan
- Phase-change memory devices and electrothermal modeling
- Helena Silva, Azer Faraclas, and Ali Gokirmak
- Nonvolatile memory device: resistive random access memory
- Peng Zhou, Lin Chen, Hangbing Lv, Haijun Wan, and Qingqing Sun
- Nanoscale resistive random access memory: materials, devices, and circuits
- Hong Yu Yu
- Qingqing Liang
- Complete guide to multiple upsets in SRAMs processed in decananometric CMOS technologies
- Gilles Gasiot and Philippe Roche
- Radiation hardened by design SRAM strategies for TID and SEE mitigation
- Lawrence T. Clark
- DRAM technology
- Myoung Jin Lee
- Isbn
- 9781466560611
- Label
- Nanoscale semiconductor memories : technology and applications
- Title
- Nanoscale semiconductor memories
- Title remainder
- technology and applications
- Statement of responsibility
- edited by Santosh K. Kurinec, Krzysztof Iniewski
- Language
- eng
- Summary
- "Preface At no time in the history of the semiconductor industry has memory technology assumed such a pivotal position. The last decade has seen a remarkable shift in usage and value of semiconductor memory technologies. These changes have been driven by the elevation of three particular target applications for the development of memory technology performance attributes. The first and most obvious shift is that mobile multimedia applications such as tablets and advanced cell phones have now replaced desktop data processing as the primary target for many new semiconductor technologies. The significance of this shift is that the smaller form factor and smaller semiconductor content automatically increases the percentage of value contributed by the analog wireless and the memory components. The second trend is driven by the explosive growth in the sheer volume of data that is being created and stored. The continuing growth in digital information is heavily driven by mobile multimedia access to cloud storage on the Internet as well as the astounding increase in image data storage and manipulation. The third trend is the shift of emphasis from the individual components to the ability to configure some highvolume elements in subsystems and multidie packages rather than as discrete components on a motherboard. Over the past three decades, numerous memory technologies have been brought to market with varying degrees of commercial success, such as static randomaccess memory (SRAM), pseudostatic RAM, NOR flash, erasable programmable readonly memory (EPROM), electrically erasable programmable readonly memory (EEPROM), dynamic RAM (DRAM), and NAND flash. Generally speaking, these "memory" technologies can be split into two categories: volatile and nonvolatile"--
- Assigning source
- Provided by publisher
- Cataloging source
- CUS
- Dewey number
- 621.39/732
- Illustrations
- illustrations
- Index
- index present
- LC call number
- TK7895.M4
- LC item number
- N36 2013
- Literary form
- non fiction
- Nature of contents
-
- dictionaries
- bibliography
- http://library.link/vocab/relatedWorkOrContributorDate
- 1960-
- http://library.link/vocab/relatedWorkOrContributorName
-
- Kurinec, Santosh K.
- Iniewski, Krzysztof
- Series statement
- Devices, circuits, and systems
- http://library.link/vocab/subjectName
-
- Semiconductor storage devices
- Nanoelectronics
- TECHNOLOGY & ENGINEERING
- TECHNOLOGY & ENGINEERING
- TECHNOLOGY & ENGINEERING
- TECHNOLOGY & ENGINEERING
- Nanoelectronics
- Semiconductor storage devices
- Label
- Nanoscale semiconductor memories : technology and applications, edited by Santosh K. Kurinec, Krzysztof Iniewski
- Bibliography note
- Includes bibliographical references and index
- Carrier category
- online resource
- Carrier category code
-
- cr
- Carrier MARC source
- rdacarrier
- Content category
- text
- Content type code
-
- txt
- Content type MARC source
- rdacontent
- Contents
-
- Concepts of capacitorless IT-DRAM and unified memory on SOI
- Sorin Cristoloveanu and Maryline Bawedin
- A-RAM family: novel capacitorless IT-DRAM cells for 22 nm nodes and beyond
- Francisco Gamiz, Noel Rodriguez, and Sorin Cristoloveanu -- Quantum dot-based flash memories
- Tobias Nowozin, Andreas Marent, Martin Geller, and Dieter Bimberg
- Spin-transfer-torque MRAM
- Kangho Lee
- Magnetic domain wall "Racetrack" memory
- Michael C. Gaidis and Luc Thomas
- Phase-change memory cell model and simulation
- SRAM: the benchmark of VLSI technology
- Jin He, Yujun Wei, and Mansun Chan
- Phase-change memory devices and electrothermal modeling
- Helena Silva, Azer Faraclas, and Ali Gokirmak
- Nonvolatile memory device: resistive random access memory
- Peng Zhou, Lin Chen, Hangbing Lv, Haijun Wan, and Qingqing Sun
- Nanoscale resistive random access memory: materials, devices, and circuits
- Hong Yu Yu
- Qingqing Liang
- Complete guide to multiple upsets in SRAMs processed in decananometric CMOS technologies
- Gilles Gasiot and Philippe Roche
- Radiation hardened by design SRAM strategies for TID and SEE mitigation
- Lawrence T. Clark
- DRAM technology
- Myoung Jin Lee
- Control code
- 865582462
- Extent
- 1 online resource.
- Form of item
- online
- Isbn
- 9781466560611
- Media category
- computer
- Media MARC source
- rdamedia
- Media type code
-
- c
- http://library.link/vocab/ext/overdrive/overdriveId
- 549272
- Specific material designation
- remote
- System control number
- (OCoLC)865582462
- Label
- Nanoscale semiconductor memories : technology and applications, edited by Santosh K. Kurinec, Krzysztof Iniewski
- Bibliography note
- Includes bibliographical references and index
- Carrier category
- online resource
- Carrier category code
-
- cr
- Carrier MARC source
- rdacarrier
- Content category
- text
- Content type code
-
- txt
- Content type MARC source
- rdacontent
- Contents
-
- Concepts of capacitorless IT-DRAM and unified memory on SOI
- Sorin Cristoloveanu and Maryline Bawedin
- A-RAM family: novel capacitorless IT-DRAM cells for 22 nm nodes and beyond
- Francisco Gamiz, Noel Rodriguez, and Sorin Cristoloveanu -- Quantum dot-based flash memories
- Tobias Nowozin, Andreas Marent, Martin Geller, and Dieter Bimberg
- Spin-transfer-torque MRAM
- Kangho Lee
- Magnetic domain wall "Racetrack" memory
- Michael C. Gaidis and Luc Thomas
- Phase-change memory cell model and simulation
- SRAM: the benchmark of VLSI technology
- Jin He, Yujun Wei, and Mansun Chan
- Phase-change memory devices and electrothermal modeling
- Helena Silva, Azer Faraclas, and Ali Gokirmak
- Nonvolatile memory device: resistive random access memory
- Peng Zhou, Lin Chen, Hangbing Lv, Haijun Wan, and Qingqing Sun
- Nanoscale resistive random access memory: materials, devices, and circuits
- Hong Yu Yu
- Qingqing Liang
- Complete guide to multiple upsets in SRAMs processed in decananometric CMOS technologies
- Gilles Gasiot and Philippe Roche
- Radiation hardened by design SRAM strategies for TID and SEE mitigation
- Lawrence T. Clark
- DRAM technology
- Myoung Jin Lee
- Control code
- 865582462
- Extent
- 1 online resource.
- Form of item
- online
- Isbn
- 9781466560611
- Media category
- computer
- Media MARC source
- rdamedia
- Media type code
-
- c
- http://library.link/vocab/ext/overdrive/overdriveId
- 549272
- Specific material designation
- remote
- System control number
- (OCoLC)865582462
Subject
- Nanoelectronics
- Nanoelectronics
- Semiconductor storage devices
- Semiconductor storage devices
- TECHNOLOGY & ENGINEERING -- Electronics | Circuits | General
- TECHNOLOGY & ENGINEERING -- Electronics | General
- TECHNOLOGY & ENGINEERING -- Mechanical
- TECHNOLOGY & ENGINEERING -- Nanotechnology & MEMS
Member of
Library Links
Embed
Settings
Select options that apply then copy and paste the RDF/HTML data fragment to include in your application
Embed this data in a secure (HTTPS) page:
Layout options:
Include data citation:
<div class="citation" vocab="http://schema.org/"><i class="fa fa-external-link-square fa-fw"></i> Data from <span resource="http://link.library.missouri.edu/portal/Nanoscale-semiconductor-memories--technology-and/7_j3gM5Wyok/" typeof="Book http://bibfra.me/vocab/lite/Item"><span property="name http://bibfra.me/vocab/lite/label"><a href="http://link.library.missouri.edu/portal/Nanoscale-semiconductor-memories--technology-and/7_j3gM5Wyok/">Nanoscale semiconductor memories : technology and applications, edited by Santosh K. Kurinec, Krzysztof Iniewski</a></span> - <span property="potentialAction" typeOf="OrganizeAction"><span property="agent" typeof="LibrarySystem http://library.link/vocab/LibrarySystem" resource="http://link.library.missouri.edu/"><span property="name http://bibfra.me/vocab/lite/label"><a property="url" href="http://link.library.missouri.edu/">University of Missouri Libraries</a></span></span></span></span></div>
Note: Adjust the width and height settings defined in the RDF/HTML code fragment to best match your requirements
Preview
Cite Data - Experimental
Data Citation of the Item Nanoscale semiconductor memories : technology and applications, edited by Santosh K. Kurinec, Krzysztof Iniewski
Copy and paste the following RDF/HTML data fragment to cite this resource
<div class="citation" vocab="http://schema.org/"><i class="fa fa-external-link-square fa-fw"></i> Data from <span resource="http://link.library.missouri.edu/portal/Nanoscale-semiconductor-memories--technology-and/7_j3gM5Wyok/" typeof="Book http://bibfra.me/vocab/lite/Item"><span property="name http://bibfra.me/vocab/lite/label"><a href="http://link.library.missouri.edu/portal/Nanoscale-semiconductor-memories--technology-and/7_j3gM5Wyok/">Nanoscale semiconductor memories : technology and applications, edited by Santosh K. Kurinec, Krzysztof Iniewski</a></span> - <span property="potentialAction" typeOf="OrganizeAction"><span property="agent" typeof="LibrarySystem http://library.link/vocab/LibrarySystem" resource="http://link.library.missouri.edu/"><span property="name http://bibfra.me/vocab/lite/label"><a property="url" href="http://link.library.missouri.edu/">University of Missouri Libraries</a></span></span></span></span></div>