Coverart for item
The Resource Nanoscale semiconductor memories : technology and applications, edited by Santosh K. Kurinec, Krzysztof Iniewski

Nanoscale semiconductor memories : technology and applications, edited by Santosh K. Kurinec, Krzysztof Iniewski

Label
Nanoscale semiconductor memories : technology and applications
Title
Nanoscale semiconductor memories
Title remainder
technology and applications
Statement of responsibility
edited by Santosh K. Kurinec, Krzysztof Iniewski
Contributor
Subject
Genre
Language
eng
Summary
The book has two-fold intentions. Firstly it assembles the latest research in the field of nanoscale memories technology in one place. And secondly, it exposes the reader to myriad applications that nanoscale memories technology has enabled. The book is meant for advanced graduate research work or for academicians and researchers. This way the book has a widespread appeal, including practicing engineers, academicians, research scientists, and senior graduate students. Nanoscale memories today have a widespread application range
Member of
Cataloging source
UMI
Dewey number
621.4
Illustrations
illustrations
Index
no index present
LC call number
TK7895.M4
LC item number
N36 2014
Literary form
non fiction
Nature of contents
  • dictionaries
  • bibliography
http://library.link/vocab/relatedWorkOrContributorDate
1960-
http://library.link/vocab/relatedWorkOrContributorName
  • Kurinec, Santosh K
  • Iniewski, Krzysztof
Series statement
Devices, circuits, and systems
http://library.link/vocab/subjectName
  • Semiconductor storage devices
  • Nanoelectronics
  • Nanoelectronics
  • Semiconductor storage devices
Label
Nanoscale semiconductor memories : technology and applications, edited by Santosh K. Kurinec, Krzysztof Iniewski
Instantiates
Publication
Bibliography note
Includes bibliographical references
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
  • Front Cover; Contents; Preface; Editors; Contributors; Chapter 1: SRAM: The Benchmark of VLSI Technology; Chapter 2: Complete Guide to Multiple Upsets in SRAMs Processed in Decananometric CMOS Technologies; Chapter 3: Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation; Chapter 4: DRAM Technology; Chapter 5: Concepts of Capacitorless 1T-DRAM and Unified Memory on SOI; Chapter 6: A-RAM Family: Novel Capacitorless 1T-DRAM Cells for 22 nm Node and Beyond; Chapter 7: Quantum Dot-Based Flash Memories; Chapter 8: Spin-Transfer-Torque MRAM
  • Chapter 9: Magnetic Domain Wall "Racetrack" MemoryChapter 10: Phase-Change Memory Cell Model and Simulation; Chapter 11: Phase-Change Memory Devices and Electrothermal Modeling; Chapter 12: Nonvolatile Memory Device: Resistive Random Access Memory; Chapter 13: Nanoscale Resistive Random Access Memory: Materials, Devices, and Circuits; Back Cover
Control code
870450000
Dimensions
unknown
Extent
1 online resource (xx, 418 pages)
Form of item
online
Isbn
9781306180214
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Other physical details
illustrations.
http://library.link/vocab/ext/overdrive/overdriveId
cl0500000371
Sound
unknown sound
Specific material designation
remote
System control number
(OCoLC)870450000
Label
Nanoscale semiconductor memories : technology and applications, edited by Santosh K. Kurinec, Krzysztof Iniewski
Publication
Bibliography note
Includes bibliographical references
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
  • Front Cover; Contents; Preface; Editors; Contributors; Chapter 1: SRAM: The Benchmark of VLSI Technology; Chapter 2: Complete Guide to Multiple Upsets in SRAMs Processed in Decananometric CMOS Technologies; Chapter 3: Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation; Chapter 4: DRAM Technology; Chapter 5: Concepts of Capacitorless 1T-DRAM and Unified Memory on SOI; Chapter 6: A-RAM Family: Novel Capacitorless 1T-DRAM Cells for 22 nm Node and Beyond; Chapter 7: Quantum Dot-Based Flash Memories; Chapter 8: Spin-Transfer-Torque MRAM
  • Chapter 9: Magnetic Domain Wall "Racetrack" MemoryChapter 10: Phase-Change Memory Cell Model and Simulation; Chapter 11: Phase-Change Memory Devices and Electrothermal Modeling; Chapter 12: Nonvolatile Memory Device: Resistive Random Access Memory; Chapter 13: Nanoscale Resistive Random Access Memory: Materials, Devices, and Circuits; Back Cover
Control code
870450000
Dimensions
unknown
Extent
1 online resource (xx, 418 pages)
Form of item
online
Isbn
9781306180214
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Other physical details
illustrations.
http://library.link/vocab/ext/overdrive/overdriveId
cl0500000371
Sound
unknown sound
Specific material designation
remote
System control number
(OCoLC)870450000

Library Locations

    • Ellis LibraryBorrow it
      1020 Lowry Street, Columbia, MO, 65201, US
      38.944491 -92.326012
    • Engineering Library & Technology CommonsBorrow it
      W2001 Lafferre Hall, Columbia, MO, 65211, US
      38.946102 -92.330125
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