The Resource Photoresponse study of platinum silicide Schottky-barrier diodes and electrical characterization of porous silicon with some device applications, by Marwan Hajsaid

Photoresponse study of platinum silicide Schottky-barrier diodes and electrical characterization of porous silicon with some device applications, by Marwan Hajsaid

Label
Photoresponse study of platinum silicide Schottky-barrier diodes and electrical characterization of porous silicon with some device applications
Title
Photoresponse study of platinum silicide Schottky-barrier diodes and electrical characterization of porous silicon with some device applications
Statement of responsibility
by Marwan Hajsaid
Title variation
PT2 5BD for VUV detection & characterization of PS
Creator
Subject
Language
eng
Summary
Silicide Schottky-barrier detectors are widely used as infrared sensors and have been optimized for this frequency range. In this work, an effort has been made to fabricate improved platinum silicide Schottky barriers to be used as detectors in the vacuum ultraviolet frequency range. An extensive study of porous silicon was undertaken to create a highly efficient visible photoluminescence source. If successful, this technology could pave the way for visible silicon optoelectronics. Pt$\sb2$Si Schottky-barrier photodiodes were fabricated using standard silicon processing. Quantum efficiency measurements were performed on those photodetectors, while they were operated in the front illumination mode, in the wavelength region of 116.4-221.4 nm. Energy conversion efficiency was also performed at 172 nm radiation using a microwave driven plasma lamp that produces excimer radiation from a xenon gas discharge. Porous silicon samples of good uniformity were made using an electrochemical etching technique with HF based solutions. A new excitation method consisting of an AC voltage source in series with the conventional DC source was developed. Electrical characterization such as capacitance and current-voltage (I-V) measurements were performed on porous silicon with contacts of thermally evaporated aluminum. A study of the mechanical stress effects on the I-V characteristics of porous silicon with a sputtered platinum top contact was also performed. The carrier conduction mechanism in porous silicon was studied by current-voltage-temperature (I-V-T) measurements on aluminum/porous. silicon/p-type silicon structures. Capacitance-voltage (C-V) measurements were also performed on the same structure. Porous silicon was used for selective growth of diamond films by the hot-filament chemical vapor deposition (HFCVD) technique. The diamond films were characterized using X-ray diffraction, Raman spectroscopy, and scanning electron microscopy
Additional physical form
Also available on the Internet.
Cataloging source
MUU
http://library.link/vocab/creatorDate
1965-
http://library.link/vocab/creatorName
Hajsaid, Marwan
Degree
Ph. D.
Dissertation year
1996.
Government publication
government publication of a state province territory dependency etc
Granting institution
University of Missouri-Columbia
Illustrations
illustrations
Index
no index present
Literary form
non fiction
Nature of contents
  • bibliography
  • theses
http://library.link/vocab/subjectName
  • Platinum
  • Silicides
  • Diodes, Schottky-barrier
  • Porous silicon
  • Far ultraviolet detectors
  • Optoelectronics
Target audience
specialized
Label
Photoresponse study of platinum silicide Schottky-barrier diodes and electrical characterization of porous silicon with some device applications, by Marwan Hajsaid
Instantiates
Publication
Note
  • Typescript
  • Vita
Bibliography note
Includes bibliographical references (leaves 138-143)
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Control code
36403693
Dimensions
29 cm
Dimensions
unknown
Extent
xvii, 144 leaves
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Other physical details
illustrations
Specific material designation
remote
Label
Photoresponse study of platinum silicide Schottky-barrier diodes and electrical characterization of porous silicon with some device applications, by Marwan Hajsaid
Publication
Note
  • Typescript
  • Vita
Bibliography note
Includes bibliographical references (leaves 138-143)
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Control code
36403693
Dimensions
29 cm
Dimensions
unknown
Extent
xvii, 144 leaves
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Other physical details
illustrations
Specific material designation
remote

Library Locations

    • Ellis LibraryBorrow it
      1020 Lowry Street, Columbia, MO, 65201, US
      38.944491 -92.326012
    • Engineering Library & Technology CommonsBorrow it
      W2001 Lafferre Hall, Columbia, MO, 65211, US
      38.946102 -92.330125
    • University of Missouri Libraries DepositoryBorrow it
      2908 Lemone Blvd, Columbia, MO, 65211, US
      38.919360 -92.291620
Processing Feedback ...