Coverart for item
The Resource Random telegraph signals in semiconductor devices, Eddy Simoen, Cor Claeys

Random telegraph signals in semiconductor devices, Eddy Simoen, Cor Claeys

Label
Random telegraph signals in semiconductor devices
Title
Random telegraph signals in semiconductor devices
Statement of responsibility
Eddy Simoen, Cor Claeys
Creator
Contributor
Author
Publisher
Subject
Language
eng
Summary
Following their first observation in 1984, random telegraph signals (RTSs) were initially a purely scientific tool to study fundamental aspects of defects in semiconductor devices. As semiconductor devices move to the nanoscale however, RTSs have become an issue of major concern to the semiconductor industry, both in development of current technology, such as memory devices and logic circuits, as well as in future semiconductor devices beyond the silicon roadmap, such as nanowire, TFET and carbon nanotube-based devices. It has become clear that the reliability of state-of-the-art and future CMOS technology nodes is dominated by RTS and single trap phenomena, and so its understanding is of vital importance for the modelling and simulation of the operation and the expected lifetime of CMOS devices and circuits. It is the aim of this book to provide a comprehensive and up-to-date review of one of the most challenging issues facing the semiconductor industry, from the fundamentals of RTSs to applied technology
Member of
Biographical or historical data
Eddy Simoen is Senior Researcher at imec and Professor at Ghent University, Belgium. Cor Claeys is Director of Advanced Semiconductor Technologies at imec, and Professor at KU Leuven, Belgium.
Cataloging source
CaBNVSL
http://library.link/vocab/creatorName
Simoen, Eddy
Dewey number
621.3815/2
Illustrations
illustrations
Index
no index present
LC call number
TK7871.85
LC item number
.S567 2016eb
Literary form
non fiction
Nature of contents
  • dictionaries
  • bibliography
http://library.link/vocab/relatedWorkOrContributorName
  • Claeys, Cor L.
  • Institute of Physics (Great Britain)
Series statement
IOP Expanding Physics,
http://library.link/vocab/subjectName
  • Semiconductors
  • Electricity, electromagnetism and magnetism
  • Electronic devices & materials
  • TECHNOLOGY & ENGINEERING
  • SCIENCE
  • SCIENCE
  • Semiconductors
Target audience
adult
Label
Random telegraph signals in semiconductor devices, Eddy Simoen, Cor Claeys
Instantiates
Publication
Note
  • "Version: 20161001"--Title page verso
  • Title from PDF title page (viewed on November 2, 2016)
Bibliography note
Includes bibliographical references
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Color
multicolored
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
  • Preface -- 1. Introduction
  • 2. Random telegraph signal phenomenology -- 2.1. RTS time constants -- 2.2. RTS amplitude behavior -- 2.3. RTS in the gate current of a MOS device -- 2.4. RTS in the junction leakage current of a MOSFET -- 2.5. Multiple and complex
  • 3. RTS modeling, simulation and parameter extraction -- 3.1. Time constant modeling and simulation -- 3.2. Extraction trap position from RTS time constants -- 3.3. RTS amplitude modeling -- 3.4. Atomistic numerical modeling of the RTS amplitude -- 3.5. Novel measurement and analysis methods -- 3.6. Ab initio modeling of RTS in gate dielectrics
  • 4. Impact device processing and scaling on RTS -- 4.1. Processing effects on RTS -- 4.2. RTS in fin-type architectures -- 4.3. Nanometric scaling aspects of RTS -- 4.4. RTS in 'beyond-silicon' devices
  • 5. Operational and reliability aspects of RTS -- 5.1. Switching AC operation of RTS -- 5.2. Impact of uniform and HC degradation -- 5.3. BTI and RTS: oxide trapping? -- 5.4. Statistical RTS measurement methods -- 5.5. Device and circuit simulation of dynamic variability
  • 6. RTS in memory and imager circuits -- 6.1. RTS in flash and SRAM cells -- 6.2. RTS in DRAM and logic circuits -- 6.3. RTS in novel ReRAM and PCMs -- 6.4. RTS in CMOS imagers and CCDs -- 7. General conclusions
Control code
962422271
Dimensions
unknown
Extent
1 online resource (1 volume (various pagings))
File format
multiple file formats
Form of item
online
Isbn
9780750312721
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Other control number
10.1088/978-0-7503-1272-1
Other physical details
illustrations (some color).
Reformatting quality
access
Specific material designation
remote
System control number
(OCoLC)962422271
Label
Random telegraph signals in semiconductor devices, Eddy Simoen, Cor Claeys
Publication
Note
  • "Version: 20161001"--Title page verso
  • Title from PDF title page (viewed on November 2, 2016)
Bibliography note
Includes bibliographical references
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Color
multicolored
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
  • Preface -- 1. Introduction
  • 2. Random telegraph signal phenomenology -- 2.1. RTS time constants -- 2.2. RTS amplitude behavior -- 2.3. RTS in the gate current of a MOS device -- 2.4. RTS in the junction leakage current of a MOSFET -- 2.5. Multiple and complex
  • 3. RTS modeling, simulation and parameter extraction -- 3.1. Time constant modeling and simulation -- 3.2. Extraction trap position from RTS time constants -- 3.3. RTS amplitude modeling -- 3.4. Atomistic numerical modeling of the RTS amplitude -- 3.5. Novel measurement and analysis methods -- 3.6. Ab initio modeling of RTS in gate dielectrics
  • 4. Impact device processing and scaling on RTS -- 4.1. Processing effects on RTS -- 4.2. RTS in fin-type architectures -- 4.3. Nanometric scaling aspects of RTS -- 4.4. RTS in 'beyond-silicon' devices
  • 5. Operational and reliability aspects of RTS -- 5.1. Switching AC operation of RTS -- 5.2. Impact of uniform and HC degradation -- 5.3. BTI and RTS: oxide trapping? -- 5.4. Statistical RTS measurement methods -- 5.5. Device and circuit simulation of dynamic variability
  • 6. RTS in memory and imager circuits -- 6.1. RTS in flash and SRAM cells -- 6.2. RTS in DRAM and logic circuits -- 6.3. RTS in novel ReRAM and PCMs -- 6.4. RTS in CMOS imagers and CCDs -- 7. General conclusions
Control code
962422271
Dimensions
unknown
Extent
1 online resource (1 volume (various pagings))
File format
multiple file formats
Form of item
online
Isbn
9780750312721
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Other control number
10.1088/978-0-7503-1272-1
Other physical details
illustrations (some color).
Reformatting quality
access
Specific material designation
remote
System control number
(OCoLC)962422271

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