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The Resource Silicon-germanium carbon alloy, edited by S.T. Pantelides and S. Zollner

Silicon-germanium carbon alloy, edited by S.T. Pantelides and S. Zollner

Label
Silicon-germanium carbon alloy
Title
Silicon-germanium carbon alloy
Statement of responsibility
edited by S.T. Pantelides and S. Zollner
Contributor
Subject
Language
eng
Cataloging source
DLC
Dewey number
621.3815/2
Illustrations
illustrations
Index
index present
LC call number
TA479.S5
LC item number
S55 2002
Literary form
non fiction
Nature of contents
bibliography
http://library.link/vocab/relatedWorkOrContributorName
  • Pantelides, Sokrates T
  • Zollner, Stefan
Series statement
Optoelectronic properties of semiconductors and superlattices
http://library.link/vocab/subjectName
  • Silicon alloys
  • Germanium alloys
Label
Silicon-germanium carbon alloy, edited by S.T. Pantelides and S. Zollner
Instantiates
Publication
Bibliography note
Includes bibliographical references and index
Contents
  • J.L. Hoyt
  • 4.
  • Electron Transport in Surface-Channel Strained-Si MOSFETs and Modulation-Doped FETs
  • D. Vasileska, G.F. Formicone and D.K. Ferry
  • 5.
  • The Effects of Carbon on the Optical and Structural Properties of SiGeC Alloys
  • J. Kolodzey, L.V. Kulik and M.W. Dashiell
  • 1.
  • Band Alignments and Band Gaps in Si[subscript 1-x-y]Ge[subscript x]C[subscript y]/Si(001) Structures
  • M. Yang, C.-L. Chang and J.C. Sturm
  • 2.
  • Synthesis and Analysis of Compounds and Alloys in the GeC, SiC, and SiGeC Systems
  • J. Kouvetakis and J.W. Mayer
  • 3.
  • Substitutional Carbon Incorporation and Electronic Characterization of Si[subscript 1-y]C[subscript y]/Si and Si[subscript 1-x-y]Ge[subscript x]C[subscript y]/Si Heterojunctions
Control code
48003357
Dimensions
24 cm.
Extent
vi, 538 p.
Isbn
9781560329633
Isbn Type
(alk. paper)
Lccn
2001053517
Other physical details
ill.
Label
Silicon-germanium carbon alloy, edited by S.T. Pantelides and S. Zollner
Publication
Bibliography note
Includes bibliographical references and index
Contents
  • J.L. Hoyt
  • 4.
  • Electron Transport in Surface-Channel Strained-Si MOSFETs and Modulation-Doped FETs
  • D. Vasileska, G.F. Formicone and D.K. Ferry
  • 5.
  • The Effects of Carbon on the Optical and Structural Properties of SiGeC Alloys
  • J. Kolodzey, L.V. Kulik and M.W. Dashiell
  • 1.
  • Band Alignments and Band Gaps in Si[subscript 1-x-y]Ge[subscript x]C[subscript y]/Si(001) Structures
  • M. Yang, C.-L. Chang and J.C. Sturm
  • 2.
  • Synthesis and Analysis of Compounds and Alloys in the GeC, SiC, and SiGeC Systems
  • J. Kouvetakis and J.W. Mayer
  • 3.
  • Substitutional Carbon Incorporation and Electronic Characterization of Si[subscript 1-y]C[subscript y]/Si and Si[subscript 1-x-y]Ge[subscript x]C[subscript y]/Si Heterojunctions
Control code
48003357
Dimensions
24 cm.
Extent
vi, 538 p.
Isbn
9781560329633
Isbn Type
(alk. paper)
Lccn
2001053517
Other physical details
ill.

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