The Resource Silicon technologies : ion implantation and thermal treatment, edited by Annie Baudrant
Silicon technologies : ion implantation and thermal treatment, edited by Annie Baudrant
Resource Information
The item Silicon technologies : ion implantation and thermal treatment, edited by Annie Baudrant represents a specific, individual, material embodiment of a distinct intellectual or artistic creation found in University of Missouri Libraries.This item is available to borrow from 2 library branches.
Resource Information
The item Silicon technologies : ion implantation and thermal treatment, edited by Annie Baudrant represents a specific, individual, material embodiment of a distinct intellectual or artistic creation found in University of Missouri Libraries.
This item is available to borrow from 2 library branches.
- Summary
- The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion
- Language
- eng
- Extent
- 1 online resource
- Note
- Title from PDF title page (viewed on Feb. 28, 2013)
- Contents
-
- Cover; Title Page; Copyright Page; Table of Contents; Preface; Chapter 1. Silicon and Silicon Carbide Oxidation; 1.1. Introduction; 1.2. Overview of the various oxidation techniques; 1.2.1. General information; 1.2.2. Most frequently used methods in the semiconductor industry; 1.2.3. Other methods; 1.3. Some physical properties of silica; 1.3.1. The silica structure; 1.3.2. Three useful parameters of silica; 1.3.3. Transport properties in silica; 1.4. Equations of atomic transport during oxidation; 1.4.1. Transport equations in the general case
- 1.5.5. Experimental results and conclusions on the transport mechanisms during the anodic oxidation of silicon1.5.6. Important experimental results from dry SiC thermal oxidation; 1.6. Transport equations in the case of thermal oxidation; 1.6.1. General information on flux and on growth kinetics; 1.6.2. Flux calculation for neutral mobile species; 1.6.3. Flux calculation for ion mobile species; 1.7. Deal and Grove theory of thermal oxidation; 1.7.1. Flux calculation; 1.7.2. Growth kinetics equations; 1.7.3. Remarks on the fluctuations of the oxidation constants kP and kL
- 1.7.4. Determination of the oxidation parameters from experimental results1.7.5. Confrontation of the Deal and Grove theory with experimental results; 1.7.6. Conclusions on the Deal and Grove theory; 1.8. Theory of thermal oxidation under water vapor of silicon; 1.8.1. Concentration profiles expected for H2O; 1.8.2. Concentration profiles expected for the OH groups; 1.8.3. Concentration profiles expected for H2; 1.8.4. Concentration profiles expected for H; 1.8.5. Comparison of the expected and the experimental profiles; 1.8.6. Wolters theory
- 1.9. Kinetics of growth in O2 for oxide films < 30 nm1.9.1. Introduction; 1.9.2. Oxidation models of thin films; 1.9.3. Case of ultra-thin films (< 5 nm); 1.9.4. On line simulator; 1.9.5. Kinetics and models of SiC oxidation; 1.10. Fluctuations of the oxidation constants under experimental conditions; 1.10.1. Role of the pressure; 1.10.2. Role of the temperature; 1.10.3. Role of the crystal direction; 1.10.4. Role of doping; 1.11. Conclusion; 1.12. Bibliography; Chapter 2. Ion Implantation; 2.1. Introduction; 2.2. Ion implanters; 2.2.1. General description; 2.2.2. Ion sources
- Isbn
- 9781118601143
- Label
- Silicon technologies : ion implantation and thermal treatment
- Title
- Silicon technologies
- Title remainder
- ion implantation and thermal treatment
- Statement of responsibility
- edited by Annie Baudrant
- Language
- eng
- Summary
- The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion
- Cataloging source
- N$T
- Dewey number
- 621.3815/2
- Illustrations
- illustrations
- Index
- index present
- LC call number
- TK7871.85
- Literary form
- non fiction
- Nature of contents
-
- dictionaries
- bibliography
- http://library.link/vocab/relatedWorkOrContributorName
- Baudrant, Annie
- http://library.link/vocab/subjectName
-
- Semiconductor doping
- Ion implantation
- Semiconductors
- TECHNOLOGY & ENGINEERING
- TECHNOLOGY & ENGINEERING
- Ion implantation
- Semiconductor doping
- Semiconductors
- Label
- Silicon technologies : ion implantation and thermal treatment, edited by Annie Baudrant
- Note
- Title from PDF title page (viewed on Feb. 28, 2013)
- Antecedent source
- unknown
- Bibliography note
- Includes bibliographical references and index
- Carrier category
- online resource
- Carrier category code
-
- cr
- Carrier MARC source
- rdacarrier
- Color
- multicolored
- Content category
- text
- Content type code
-
- txt
- Content type MARC source
- rdacontent
- Contents
-
- Cover; Title Page; Copyright Page; Table of Contents; Preface; Chapter 1. Silicon and Silicon Carbide Oxidation; 1.1. Introduction; 1.2. Overview of the various oxidation techniques; 1.2.1. General information; 1.2.2. Most frequently used methods in the semiconductor industry; 1.2.3. Other methods; 1.3. Some physical properties of silica; 1.3.1. The silica structure; 1.3.2. Three useful parameters of silica; 1.3.3. Transport properties in silica; 1.4. Equations of atomic transport during oxidation; 1.4.1. Transport equations in the general case
- 1.5.5. Experimental results and conclusions on the transport mechanisms during the anodic oxidation of silicon1.5.6. Important experimental results from dry SiC thermal oxidation; 1.6. Transport equations in the case of thermal oxidation; 1.6.1. General information on flux and on growth kinetics; 1.6.2. Flux calculation for neutral mobile species; 1.6.3. Flux calculation for ion mobile species; 1.7. Deal and Grove theory of thermal oxidation; 1.7.1. Flux calculation; 1.7.2. Growth kinetics equations; 1.7.3. Remarks on the fluctuations of the oxidation constants kP and kL
- 1.7.4. Determination of the oxidation parameters from experimental results1.7.5. Confrontation of the Deal and Grove theory with experimental results; 1.7.6. Conclusions on the Deal and Grove theory; 1.8. Theory of thermal oxidation under water vapor of silicon; 1.8.1. Concentration profiles expected for H2O; 1.8.2. Concentration profiles expected for the OH groups; 1.8.3. Concentration profiles expected for H2; 1.8.4. Concentration profiles expected for H; 1.8.5. Comparison of the expected and the experimental profiles; 1.8.6. Wolters theory
- 1.9. Kinetics of growth in O2 for oxide films < 30 nm1.9.1. Introduction; 1.9.2. Oxidation models of thin films; 1.9.3. Case of ultra-thin films (< 5 nm); 1.9.4. On line simulator; 1.9.5. Kinetics and models of SiC oxidation; 1.10. Fluctuations of the oxidation constants under experimental conditions; 1.10.1. Role of the pressure; 1.10.2. Role of the temperature; 1.10.3. Role of the crystal direction; 1.10.4. Role of doping; 1.11. Conclusion; 1.12. Bibliography; Chapter 2. Ion Implantation; 2.1. Introduction; 2.2. Ion implanters; 2.2.1. General description; 2.2.2. Ion sources
- Control code
- 828672185
- Dimensions
- unknown
- Extent
- 1 online resource
- File format
- unknown
- Form of item
- online
- Isbn
- 9781118601143
- Lccn
- 2011008131
- Level of compression
- unknown
- Media category
- computer
- Media MARC source
- rdamedia
- Media type code
-
- c
- Other physical details
- illustrations
- http://library.link/vocab/ext/overdrive/overdriveId
- cl0500000292
- Quality assurance targets
- not applicable
- Reformatting quality
- unknown
- Sound
- unknown sound
- Specific material designation
- remote
- System control number
- (OCoLC)828672185
- Label
- Silicon technologies : ion implantation and thermal treatment, edited by Annie Baudrant
- Note
- Title from PDF title page (viewed on Feb. 28, 2013)
- Antecedent source
- unknown
- Bibliography note
- Includes bibliographical references and index
- Carrier category
- online resource
- Carrier category code
-
- cr
- Carrier MARC source
- rdacarrier
- Color
- multicolored
- Content category
- text
- Content type code
-
- txt
- Content type MARC source
- rdacontent
- Contents
-
- Cover; Title Page; Copyright Page; Table of Contents; Preface; Chapter 1. Silicon and Silicon Carbide Oxidation; 1.1. Introduction; 1.2. Overview of the various oxidation techniques; 1.2.1. General information; 1.2.2. Most frequently used methods in the semiconductor industry; 1.2.3. Other methods; 1.3. Some physical properties of silica; 1.3.1. The silica structure; 1.3.2. Three useful parameters of silica; 1.3.3. Transport properties in silica; 1.4. Equations of atomic transport during oxidation; 1.4.1. Transport equations in the general case
- 1.5.5. Experimental results and conclusions on the transport mechanisms during the anodic oxidation of silicon1.5.6. Important experimental results from dry SiC thermal oxidation; 1.6. Transport equations in the case of thermal oxidation; 1.6.1. General information on flux and on growth kinetics; 1.6.2. Flux calculation for neutral mobile species; 1.6.3. Flux calculation for ion mobile species; 1.7. Deal and Grove theory of thermal oxidation; 1.7.1. Flux calculation; 1.7.2. Growth kinetics equations; 1.7.3. Remarks on the fluctuations of the oxidation constants kP and kL
- 1.7.4. Determination of the oxidation parameters from experimental results1.7.5. Confrontation of the Deal and Grove theory with experimental results; 1.7.6. Conclusions on the Deal and Grove theory; 1.8. Theory of thermal oxidation under water vapor of silicon; 1.8.1. Concentration profiles expected for H2O; 1.8.2. Concentration profiles expected for the OH groups; 1.8.3. Concentration profiles expected for H2; 1.8.4. Concentration profiles expected for H; 1.8.5. Comparison of the expected and the experimental profiles; 1.8.6. Wolters theory
- 1.9. Kinetics of growth in O2 for oxide films < 30 nm1.9.1. Introduction; 1.9.2. Oxidation models of thin films; 1.9.3. Case of ultra-thin films (< 5 nm); 1.9.4. On line simulator; 1.9.5. Kinetics and models of SiC oxidation; 1.10. Fluctuations of the oxidation constants under experimental conditions; 1.10.1. Role of the pressure; 1.10.2. Role of the temperature; 1.10.3. Role of the crystal direction; 1.10.4. Role of doping; 1.11. Conclusion; 1.12. Bibliography; Chapter 2. Ion Implantation; 2.1. Introduction; 2.2. Ion implanters; 2.2.1. General description; 2.2.2. Ion sources
- Control code
- 828672185
- Dimensions
- unknown
- Extent
- 1 online resource
- File format
- unknown
- Form of item
- online
- Isbn
- 9781118601143
- Lccn
- 2011008131
- Level of compression
- unknown
- Media category
- computer
- Media MARC source
- rdamedia
- Media type code
-
- c
- Other physical details
- illustrations
- http://library.link/vocab/ext/overdrive/overdriveId
- cl0500000292
- Quality assurance targets
- not applicable
- Reformatting quality
- unknown
- Sound
- unknown sound
- Specific material designation
- remote
- System control number
- (OCoLC)828672185
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<div class="citation" vocab="http://schema.org/"><i class="fa fa-external-link-square fa-fw"></i> Data from <span resource="http://link.library.missouri.edu/portal/Silicon-technologies--ion-implantation-and/Chzu7z5i6QY/" typeof="Book http://bibfra.me/vocab/lite/Item"><span property="name http://bibfra.me/vocab/lite/label"><a href="http://link.library.missouri.edu/portal/Silicon-technologies--ion-implantation-and/Chzu7z5i6QY/">Silicon technologies : ion implantation and thermal treatment, edited by Annie Baudrant</a></span> - <span property="potentialAction" typeOf="OrganizeAction"><span property="agent" typeof="LibrarySystem http://library.link/vocab/LibrarySystem" resource="http://link.library.missouri.edu/"><span property="name http://bibfra.me/vocab/lite/label"><a property="url" href="http://link.library.missouri.edu/">University of Missouri Libraries</a></span></span></span></span></div>
