The Resource Simulation and design of GaAs/A1[subscript]xGa1−[subscript]xAs Multiple-Quantum-Well Fabry-Perot optical modulators, by Chih-Hsiang Lin

Simulation and design of GaAs/A1[subscript]xGa1−[subscript]xAs Multiple-Quantum-Well Fabry-Perot optical modulators, by Chih-Hsiang Lin

Label
Simulation and design of GaAs/A1[subscript]xGa1−[subscript]xAs Multiple-Quantum-Well Fabry-Perot optical modulators
Title
Simulation and design of GaAs/A1[subscript]xGa1−[subscript]xAs Multiple-Quantum-Well Fabry-Perot optical modulators
Statement of responsibility
by Chih-Hsiang Lin
Creator
Author
Subject
Language
eng
Summary
A systematic study of the GaAs/A1[subscript]xGa1-[subscript]xAs Multiple-Quantum-Well (MQW) normal-incident modulators, including the theoretical calculations of the absorption coefficient and refractive index of GaAs/A1[subscript]xGa1−[subscript]xAs quantum wells (QWs) and bulk A1[subscript]xGa1−[subscript]xAs is presented. For bulk GaAs, the discrepancy between the calculated refractive index and the experimental data is about 0.003 at 1.8 eV, and is about 0.012 at 1.2 eV. For all the other bulk A1[subscript]xGa1-[subscript]xAs, the calculated optical properties are in satisfactory agreement with the experimental data for photon energies from 1.2 to 6 eV. The calculated absorption coefficients of the GaAs/A1[subscript]xGa1−[subscript]xAs QWs as a function of electric field have been compated with the experimental data, and achieved very good of electric field have been compared with the experimental data, and achieved very good agreement with the experimental data without any adjustment in the parameters used in the calcuations. The accuracy of the calculated refractive indices of the GaAs/A1[subscript]xGa1−[subscript]xAs QWs as a function of electric field has been indirectly verified by comparing the calculated reflectance spectra of a reported normally-off GaAs/A10.2Ga0.8As MQW reflection modulator with the experimental data. Using the optical transfer matrices, and including the absorption of the GaAs/A1[subscript]xGa1−[subscript]xAs QWs in the MQW active region and the GaAs substrate, the operations of a GaAs/A1[subscript]xGa1−[subscript]xAs MQW normal-incident modulator are well simulated. Our calculations suggest that a normally-off refractive GaAs/A10.2Ga0.8As MQW reflection modulator with an ON/OFF reflectance change of 42.9% and ON/OFF contrast ratio of 1539 for an operating voltage of only 2.33 V can be fabricated by MBE, which is better than any normally-off modulators so far reported in the literature
Cataloging source
MUU
http://library.link/vocab/creatorDate
1963-
http://library.link/vocab/creatorName
Lin, Chih-Hsiang
Degree
Ph.D.
Dissertation year
1993.
Granting institution
University of Missouri--Columbia,
Illustrations
illustrations
Index
no index present
LC call number
TK145.Y1993
LC item number
L56
Literary form
non fiction
Nature of contents
  • bibliography
  • theses
http://library.link/vocab/subjectName
  • Optoelectronic devices
  • Modulators (Electronics)
  • Quantum wells
  • Quantum optics
  • Optoelectronics
  • Reflection (Optics)
Label
Simulation and design of GaAs/A1[subscript]xGa1−[subscript]xAs Multiple-Quantum-Well Fabry-Perot optical modulators, by Chih-Hsiang Lin
Instantiates
Publication
Contributor
Thesis advisor
Note
  • Thesis advisor: Jon M. Meese
  • Department: Electrical engineering
Bibliography note
Includes bibliographical references (pages 108-112)
Carrier category
volume
Carrier category code
  • nc
Carrier MARC source
rdacarrier.
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent.
Control code
883407087
Dimensions
28 cm
Extent
x, 113 leaves
Media category
unmediated
Media MARC source
rdamedia.
Media type code
  • n
Other physical details
illustrations
System control number
(OCoLC)883407087
Label
Simulation and design of GaAs/A1[subscript]xGa1−[subscript]xAs Multiple-Quantum-Well Fabry-Perot optical modulators, by Chih-Hsiang Lin
Publication
Contributor
Thesis advisor
Note
  • Thesis advisor: Jon M. Meese
  • Department: Electrical engineering
Bibliography note
Includes bibliographical references (pages 108-112)
Carrier category
volume
Carrier category code
  • nc
Carrier MARC source
rdacarrier.
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent.
Control code
883407087
Dimensions
28 cm
Extent
x, 113 leaves
Media category
unmediated
Media MARC source
rdamedia.
Media type code
  • n
Other physical details
illustrations
System control number
(OCoLC)883407087

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