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The Resource Stress-induced phenomena in metallization : third international workshop, Palo Alto, CA June 1995, editors, Paul S. Ho [and others]

Stress-induced phenomena in metallization : third international workshop, Palo Alto, CA June 1995, editors, Paul S. Ho [and others]

Label
Stress-induced phenomena in metallization : third international workshop, Palo Alto, CA June 1995
Title
Stress-induced phenomena in metallization
Title remainder
third international workshop, Palo Alto, CA June 1995
Statement of responsibility
editors, Paul S. Ho [and others]
Creator
Contributor
Subject
Genre
Language
eng
Member of
Cataloging source
GZM
Illustrations
illustrations
Index
index present
Literary form
non fiction
http://bibfra.me/vocab/lite/meetingDate
1995
http://bibfra.me/vocab/lite/meetingName
International Workshop on Stress-Induced Phenomena in Metallization
Nature of contents
bibliography
http://library.link/vocab/relatedWorkOrContributorName
Ho, P. S
Series statement
  • American Vacuum Society series
  • AIP conference proceedings
Series volume
  • 13
  • 373
http://library.link/vocab/subjectName
  • Semiconductors
  • Integrated circuits
  • Interconnects (Integrated circuit technology)
  • Metallic films
  • Thin film devices
  • Aluminum films
  • Metallizing
  • Electrodiffusion
  • Metallic films
  • Aluminum films
Label
Stress-induced phenomena in metallization : third international workshop, Palo Alto, CA June 1995, editors, Paul S. Ho [and others]
Instantiates
Publication
Note
"DOE CONF-9506336."--T.p. verso
Bibliography note
Includes bibliographical references and index
Carrier category
volume
Carrier category code
  • nc
Carrier MARC source
rdacarrier
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
Stress characteristics and void formation in thin films and interconnects: Analysis of stresses in passivated metal lines / U. Burges [and others]. Investigation of stresses in passivated gold lines / R. Pollak [and others]. Plastic deformation and stress-induced voiding in Al-Cu interconnects / D. Jawarani [and others]. Stress relaxation and microstructural change in passivated Al(Cu) lines during isothermal annealing / I.-S. Yeo [and others]. Electrical measurement of stress-induced void growth / T.D. Sullivan, D.P. Bouldin, and D.H. Yao. Stress generation in Al-Si-Cu metallization resulting from thermal cycling between -196[degrees]C and 250[degrees]C / F. Baldwin [and others]. Stress concentration at W vias / J.R. Lloyd, J.B. Sauber, and J.A. Walls. Modeling electromigration in multi-level interconnects / D. Chidambarrao and M.M. Pelella -- Electromigration and damage mechanisms in interconnects: Stress and alloying effects in electromigration / M.A. Korhonen [and others]. Electromigration-induced voiding mechanisms in metallizations / O. Kraft, M. Bauer, and E. Arzt. Initial void formation in bamboo Al-Cu(1%) two-level structure / P.-H. Wang [and others]. Comparison of electromigration in submicron Al(Cu) and Cu thin film lines / C-K. Hu [and others]. Effects of aluminum texture on electromigration lifetime / H. Toyoda [and others]. The effect of test structure and stress condition on electromigration failure / H. Kawasaki [and others]. Cu behaviors induced by aging and their effects on electromigration resistance on Al-Cu lines / T. Nogami and T. Nemoto. In-situ side-view observation of electromigration in layered Al lines by ultrahigh voltage transmission electron microscopy / H. Okabayashi [and others]. Line length effects on lifetime measurements and resistance saturation during electromigration testing / R.G. Filippi, G.A. Biery, and R.A. Wachnik. Dependence of electromigration failure modes on EM-induced and thermally-induced mechanical stress in interconnect lines / S. Pramanick [and others]. Resistance oscillations induced by DC electromigration / S. Shingubara [and others]. Void, Si nodule and current observations by optical beam heating and current change measurement / K. Nikawa and S. Inoue. Interface diffusion and electromigration failure in narrow aluminum lines with barrier layers / R.A. Augur, F. Van den Elshout, and R.A.M. Wolters. Highly electromigration-resistive via structure using Al-reflow for multi-level interconnection / I.S. Park
Control code
35079381
Dimensions
25 cm
Extent
vii, 304 pages
Isbn
9781563964398
Lccn
96084949
Media category
unmediated
Media MARC source
rdamedia
Media type code
  • n
Other physical details
illustrations
Label
Stress-induced phenomena in metallization : third international workshop, Palo Alto, CA June 1995, editors, Paul S. Ho [and others]
Publication
Note
"DOE CONF-9506336."--T.p. verso
Bibliography note
Includes bibliographical references and index
Carrier category
volume
Carrier category code
  • nc
Carrier MARC source
rdacarrier
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
Stress characteristics and void formation in thin films and interconnects: Analysis of stresses in passivated metal lines / U. Burges [and others]. Investigation of stresses in passivated gold lines / R. Pollak [and others]. Plastic deformation and stress-induced voiding in Al-Cu interconnects / D. Jawarani [and others]. Stress relaxation and microstructural change in passivated Al(Cu) lines during isothermal annealing / I.-S. Yeo [and others]. Electrical measurement of stress-induced void growth / T.D. Sullivan, D.P. Bouldin, and D.H. Yao. Stress generation in Al-Si-Cu metallization resulting from thermal cycling between -196[degrees]C and 250[degrees]C / F. Baldwin [and others]. Stress concentration at W vias / J.R. Lloyd, J.B. Sauber, and J.A. Walls. Modeling electromigration in multi-level interconnects / D. Chidambarrao and M.M. Pelella -- Electromigration and damage mechanisms in interconnects: Stress and alloying effects in electromigration / M.A. Korhonen [and others]. Electromigration-induced voiding mechanisms in metallizations / O. Kraft, M. Bauer, and E. Arzt. Initial void formation in bamboo Al-Cu(1%) two-level structure / P.-H. Wang [and others]. Comparison of electromigration in submicron Al(Cu) and Cu thin film lines / C-K. Hu [and others]. Effects of aluminum texture on electromigration lifetime / H. Toyoda [and others]. The effect of test structure and stress condition on electromigration failure / H. Kawasaki [and others]. Cu behaviors induced by aging and their effects on electromigration resistance on Al-Cu lines / T. Nogami and T. Nemoto. In-situ side-view observation of electromigration in layered Al lines by ultrahigh voltage transmission electron microscopy / H. Okabayashi [and others]. Line length effects on lifetime measurements and resistance saturation during electromigration testing / R.G. Filippi, G.A. Biery, and R.A. Wachnik. Dependence of electromigration failure modes on EM-induced and thermally-induced mechanical stress in interconnect lines / S. Pramanick [and others]. Resistance oscillations induced by DC electromigration / S. Shingubara [and others]. Void, Si nodule and current observations by optical beam heating and current change measurement / K. Nikawa and S. Inoue. Interface diffusion and electromigration failure in narrow aluminum lines with barrier layers / R.A. Augur, F. Van den Elshout, and R.A.M. Wolters. Highly electromigration-resistive via structure using Al-reflow for multi-level interconnection / I.S. Park
Control code
35079381
Dimensions
25 cm
Extent
vii, 304 pages
Isbn
9781563964398
Lccn
96084949
Media category
unmediated
Media MARC source
rdamedia
Media type code
  • n
Other physical details
illustrations

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