The Resource Stress-induced phenomena in metallization : third international workshop, Palo Alto, CA June 1995, editors, Paul S. Ho [and others], (electronic resource)

Stress-induced phenomena in metallization : third international workshop, Palo Alto, CA June 1995, editors, Paul S. Ho [and others], (electronic resource)

Label
Stress-induced phenomena in metallization : third international workshop, Palo Alto, CA June 1995
Title
Stress-induced phenomena in metallization
Title remainder
third international workshop, Palo Alto, CA June 1995
Statement of responsibility
editors, Paul S. Ho [and others]
Creator
Contributor
Subject
Genre
Language
eng
Summary
Annotation
Member of
Cataloging source
OCLCE
Dewey number
621.3815/2
Illustrations
illustrations
Index
index present
LC call number
TK7871.85
LC item number
.S765 1996
Literary form
non fiction
http://bibfra.me/vocab/lite/meetingDate
1995
http://bibfra.me/vocab/lite/meetingName
International Workshop on Stress-Induced Phenomena in Metallization
Nature of contents
  • dictionaries
  • bibliography
http://library.link/vocab/relatedWorkOrContributorName
Ho, P. S
Series statement
AIP conference proceedings
Series volume
373
http://library.link/vocab/subjectName
  • Semiconductors
  • Integrated circuits
  • Interconnects (Integrated circuit technology)
  • Metallic films
  • Thin film devices
  • Aluminum films
  • Metallizing
  • Electrodiffusion
Summary expansion
Proceedings of the June 1995 workshop, reporting on new and basic results in electromigration and stress-induced void formation. Sections on stress characteristics and void formation in thin films and interconnects, and electromigration and damage mechanisms in interconnects, contain research in areas such as stresses in passivated gold and metal lines; electrical measurement of stress- induced void growth; modeling electromigration in multi-level interconnects; comparison of electromigration in submicron Al(Cu) and Cu thin-film lines; and resistance oscillations induced by DC electromigration. No index. Annotation c. by Book News, Inc., Portland, Or
Label
Stress-induced phenomena in metallization : third international workshop, Palo Alto, CA June 1995, editors, Paul S. Ho [and others], (electronic resource)
Instantiates
Publication
Note
  • "International Stress Workshop on Stress-Induced Phenomena in Metallization ... Third ... held at Stanford University on June 21-23, 1995"--P. vii
  • "DOE CONF-9506336"--T.p. verso
Antecedent source
file reproduced from original
Bibliography note
Includes bibliographical references and index
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
Stress characteristics and void formation in thin films and interconnects: Analysis of stresses in passivated metal lines / U. Burges ... [et al.]. Investigation of stresses in passivated gold lines / R. Pollak ... [et al.]. Plastic deformation and stress-induced voiding in Al-Cu interconnects / D. Jawarani ... [et al.]. Stress relaxation and microstructural change in passivated Al(Cu) lines during isothermal annealing / I.-S. Yeo ... [et al.]. Electrical measurement of stress-induced void growth / T.D. Sullivan, D.P. Bouldin, and D.H. Yao. Stress generation in Al-Si-Cu metallization resulting from thermal cycling between -196[degrees]C and 250[degrees]C / F. Baldwin ... [et al.]. Stress concentration at W vias / J.R. Lloyd, J.B. Sauber, and J.A. Walls. Modeling electromigration in multi-level interconnects / D. Chidambarrao and M.M. Pelella -- Electromigration and damage mechanisms in interconnects: Stress and alloying effects in electromigration / M.A. Korhonen ... [et al.]. Electromigration-induced voiding mechanisms in metallizations / O. Kraft, M. Bauer, and E. Arzt. Initial void formation in bamboo Al-Cu(1%) two-level structure / P.-H. Wang ... [et al.]. Comparison of electromigration in submicron Al(Cu) and Cu thin film lines / C-K. Hu ... [et al.]. Effects of aluminum texture on electromigration lifetime / H. Toyoda ... [et al.]. The effect of test structure and stress condition on electromigration failure / H. Kawasaki ... [et al.]. Cu behaviors induced by aging and their effects on electromigration resistance on Al-Cu lines / T. Nogami and T. Nemoto. In-situ side-view observation of electromigration in layered Al lines by ultrahigh voltage transmission electron microscopy / H. Okabayashi ... [et al.]. Line length effects on lifetime measurements and resistance saturation during electromigration testing / R.G. Filippi, G.A. Biery, and R.A. Wachnik. Dependence of electromigration failure modes on EM-induced and thermally-induced mechanical stress in interconnect lines / S. Pramanick ... [et al.]. Resistance oscillations induced by DC electromigration / S. Shingubara ... [et al.]. Void, Si nodule and current observations by optical beam heating and current change measurement / K. Nikawa and S. Inoue. Interface diffusion and electromigration failure in narrow aluminum lines with barrier layers / R.A. Augur, F. Van den Elshout, and R.A.M. Wolters. Highly electromigration-resistive via structure using Al-reflow for multi-level interconnection / I.S. Park
Control code
651981349
Dimensions
unknown
Extent
1 online resource (vii, 304 pages)
File format
one file format
Form of item
online
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Other physical details
illustrations.
Specific material designation
remote
System control number
(OCoLC)651981349
Label
Stress-induced phenomena in metallization : third international workshop, Palo Alto, CA June 1995, editors, Paul S. Ho [and others], (electronic resource)
Publication
Note
  • "International Stress Workshop on Stress-Induced Phenomena in Metallization ... Third ... held at Stanford University on June 21-23, 1995"--P. vii
  • "DOE CONF-9506336"--T.p. verso
Antecedent source
file reproduced from original
Bibliography note
Includes bibliographical references and index
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
Stress characteristics and void formation in thin films and interconnects: Analysis of stresses in passivated metal lines / U. Burges ... [et al.]. Investigation of stresses in passivated gold lines / R. Pollak ... [et al.]. Plastic deformation and stress-induced voiding in Al-Cu interconnects / D. Jawarani ... [et al.]. Stress relaxation and microstructural change in passivated Al(Cu) lines during isothermal annealing / I.-S. Yeo ... [et al.]. Electrical measurement of stress-induced void growth / T.D. Sullivan, D.P. Bouldin, and D.H. Yao. Stress generation in Al-Si-Cu metallization resulting from thermal cycling between -196[degrees]C and 250[degrees]C / F. Baldwin ... [et al.]. Stress concentration at W vias / J.R. Lloyd, J.B. Sauber, and J.A. Walls. Modeling electromigration in multi-level interconnects / D. Chidambarrao and M.M. Pelella -- Electromigration and damage mechanisms in interconnects: Stress and alloying effects in electromigration / M.A. Korhonen ... [et al.]. Electromigration-induced voiding mechanisms in metallizations / O. Kraft, M. Bauer, and E. Arzt. Initial void formation in bamboo Al-Cu(1%) two-level structure / P.-H. Wang ... [et al.]. Comparison of electromigration in submicron Al(Cu) and Cu thin film lines / C-K. Hu ... [et al.]. Effects of aluminum texture on electromigration lifetime / H. Toyoda ... [et al.]. The effect of test structure and stress condition on electromigration failure / H. Kawasaki ... [et al.]. Cu behaviors induced by aging and their effects on electromigration resistance on Al-Cu lines / T. Nogami and T. Nemoto. In-situ side-view observation of electromigration in layered Al lines by ultrahigh voltage transmission electron microscopy / H. Okabayashi ... [et al.]. Line length effects on lifetime measurements and resistance saturation during electromigration testing / R.G. Filippi, G.A. Biery, and R.A. Wachnik. Dependence of electromigration failure modes on EM-induced and thermally-induced mechanical stress in interconnect lines / S. Pramanick ... [et al.]. Resistance oscillations induced by DC electromigration / S. Shingubara ... [et al.]. Void, Si nodule and current observations by optical beam heating and current change measurement / K. Nikawa and S. Inoue. Interface diffusion and electromigration failure in narrow aluminum lines with barrier layers / R.A. Augur, F. Van den Elshout, and R.A.M. Wolters. Highly electromigration-resistive via structure using Al-reflow for multi-level interconnection / I.S. Park
Control code
651981349
Dimensions
unknown
Extent
1 online resource (vii, 304 pages)
File format
one file format
Form of item
online
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Other physical details
illustrations.
Specific material designation
remote
System control number
(OCoLC)651981349

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